tip35 tip35a tip35b tip35c maximum ratings: (t c =25c) symbol TIP36 TIP36a TIP36b TIP36c units collector-base voltage v cbo 40 60 80 100 v collector-emitter voltage v ceo 40 60 80 100 v emitter-base voltage v ebo 5.0 v continuous collector current i c 25 a peak collector current i cm 40 a continuous base current i b 5.0 a power dissipation p d 125 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance jc 1.0 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i ceo v ce =30v (tip35, tip35a, TIP36, TIP36a) 1.0 ma i ceo v ce =60v (tip35b, tip35c, TIP36b, TIP36c) 1.0 ma i ces v ce =rated v ceo 0.7 ma i ebo v eb =5.0v 1.0 ma bv ceo i c =30ma (tip35, TIP36) 40 v bv ceo i c =30ma (tip35a, TIP36a) 60 v bv ceo i c =30ma (tip35b, TIP36b) 80 v bv ceo i c =30ma (tip35c, TIP36c) 100 v v ce(sat) i c =15a, i b =1.5a 1.8 v v ce(sat) i c =25a, i b =5.0a 4.0 v v be(on) v ce =4.0v, i c =15a 2.0 v v be(on) v ce =4.0v, i c =25a 4.5 v h fe v ce =4.0v, i c =1.5a 25 h fe v ce =4.0v, i c =15a 10 100 h fe v ce =10v, i c =1.0a, f=1.0khz 25 f t v ce =10v, i c =1.0a, f=1.0mhz 3.0 mhz tip35 tip35a tip35b tip35c npn TIP36 TIP36a TIP36b TIP36c pnp complementary silicon power transistors description: the central semiconductor tip35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications. marking: full part number to-218 transistor case r2 (18-july 2013) www.centralsemi.com
tip35 tip35a tip35b tip35c npn TIP36 TIP36a TIP36b TIP36c pnp complementary silicon power transistors to-218 transistor case - mechanical outline lead code: 1) base 2) collector 3) emitter tab) collector marking: full part number www.centralsemi.com r2 (18-july 2013)
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